ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 1920AB12 12 watts, 25 volts, class ab personal 1930 - 1990 mhz general description the 1920AB12 is a common emitter transistor capable of providing 12 watts of class ab, rf output power over the band 1930-1990 mhz. this transistor is specifically designed for personal communications base station amplifier applications. it includes input prematching and utilizes gold metalization and high value emitter ballasting to provide high reliability and supreme ruggedness. . case outline 55ct, style 2 common emitter absolute maximum ratings maximum power dissipation @ 25 c 46 watts o maximum voltage and current bvces collector to emitter voltage 55 volts lvceo collector to emitter voltage 27 volts bvebo emitter to base voltage 3.5 volts ic collector current 3.5 amps maximum temperatures storage temperature - 65 to + 150 c o operating junction temperature + 200 c o electrical characteristics @ 25 c o symbol characteristics test conditions min typ max units pout pin pg h c vswr 1 power out power input power gain collector efficiency load mismatch tolerance f =1990 mhz vce = 25 volts icq = 130 mamps as above 12 7.5 8.0 43 2.2 3:1 watt watt db % bvces lvceo bvebo ices h fe cob q jc collector to emitter breakdown collector to emitter breakdown emitter to base breakdown collector leakage current dc - current gain output capacitance thermal resistance ic = 50 ma ic = 50 ma ie = 10 ma vce = 27 volts vce = 5 v, ic = 0.5 a f =1 mhz, vcb = 28 v tc = 25 c o 55 27 3.5 20 12 3 100 3.8 volts volts volts ma pf c/w o issue february 1996
typical performance 1920AB12 august 1996
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